N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50

RS Stock No.: 124-1750Brand: onsemiManufacturers Part No.: FDPF18N50
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Series

UniFET

Minimum Operating Temperature

-55 °C

Height

9.19mm

Product details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 3.08

Each (In a Tube of 50) (ex VAT)

€ 3.665

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50

€ 3.08

Each (In a Tube of 50) (ex VAT)

€ 3.665

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 200€ 3.08€ 154.00
250 - 450€ 2.72€ 136.00
500+€ 2.70€ 135.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Series

UniFET

Minimum Operating Temperature

-55 °C

Height

9.19mm

Product details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.