P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220F onsemi FQPF27P06

RS Stock No.: 124-1401Brand: onsemiManufacturers Part No.: FQPF27P06
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

16.3mm

Series

QFET

Minimum Operating Temperature

-55 °C

Product details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 2.27

Each (In a Tube of 50) (ex VAT)

€ 2.701

Each (In a Tube of 50) (inc VAT)

P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220F onsemi FQPF27P06

€ 2.27

Each (In a Tube of 50) (ex VAT)

€ 2.701

Each (In a Tube of 50) (inc VAT)

P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220F onsemi FQPF27P06
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 200€ 2.27€ 113.50
250 - 950€ 1.97€ 98.50
1000 - 2450€ 1.97€ 98.50
2500+€ 1.94€ 97.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

16.3mm

Series

QFET

Minimum Operating Temperature

-55 °C

Product details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.