Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

RS Stock No.: 145-9487Brand: InfineonManufacturers Part No.: 2N7002DWH6327XTSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.25mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Height

0.8mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0.10

Each (On a Reel of 3000) (ex VAT)

€ 0.119

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

€ 0.10

Each (On a Reel of 3000) (ex VAT)

€ 0.119

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
3000 - 3000€ 0.10€ 300.00
6000 - 12000€ 0.10€ 300.00
15000+€ 0.10€ 300.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.25mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Height

0.8mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.