N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon AUIRF1010ZS

RS Stock No.: 145-8784Brand: InfineonManufacturers Part No.: AUIRF1010ZS
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

9.65mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Country of Origin

Mexico

Product details

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon AUIRF1010ZS

P.O.A.

N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon AUIRF1010ZS
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

9.65mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Country of Origin

Mexico

Product details

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.