N-Channel MOSFET, 16.8 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R230P6XKSA1

RS Stock No.: 133-9907Brand: InfineonManufacturers Part No.: IPA60R230P6XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

16.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

530 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.65mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Height

16.15mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 16.8 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R230P6XKSA1
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P.O.A.

N-Channel MOSFET, 16.8 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R230P6XKSA1
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

16.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

530 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.65mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Height

16.15mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.