N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1

RS Stock No.: 133-9822Brand: InfineonManufacturers Part No.: IPA80R1K4P7XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

3.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Length

10.65mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

16.15mm

Series

CoolMOS P7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1

P.O.A.

N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

3.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Length

10.65mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

16.15mm

Series

CoolMOS P7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more