N-Channel MOSFET, 8 A, 800 V, 3+Tab-Pin TO-220FP Infineon IPA80R650CEXKSA1

RS Stock No.: 133-9861Brand: InfineonManufacturers Part No.: IPA80R650CEXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3+Tab

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

45 nC @ 10 V

Transistor Material

Si

Length

10.65mm

Height

16.15mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1V

Country of Origin

China

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 8 A, 800 V, 3+Tab-Pin TO-220FP Infineon IPA80R650CEXKSA1

P.O.A.

N-Channel MOSFET, 8 A, 800 V, 3+Tab-Pin TO-220FP Infineon IPA80R650CEXKSA1
Stock information temporarily unavailable.

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3+Tab

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

45 nC @ 10 V

Transistor Material

Si

Length

10.65mm

Height

16.15mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1V

Country of Origin

China

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more