N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1

RS Stock No.: 130-0897Brand: InfineonManufacturers Part No.: IPD50R380CEAUMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0.98

Each (In a Pack of 10) (ex VAT)

€ 1.166

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1
Select packaging type

€ 0.98

Each (In a Pack of 10) (ex VAT)

€ 1.166

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 40€ 0.98€ 9.80
50 - 490€ 0.96€ 9.60
500 - 990€ 0.71€ 7.10
1000 - 2490€ 0.60€ 6.00
2500+€ 0.58€ 5.80

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.