N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380P6ATMA1

RS Stock No.: 130-0899Brand: InfineonManufacturers Part No.: IPD60R380P6ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.6 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

2.41mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380P6ATMA1
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P.O.A.

N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380P6ATMA1
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.6 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

2.41mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more