N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB Infineon IRFB5620PBF

RS Stock No.: 124-9009Brand: InfineonManufacturers Part No.: IRFB5620PBF
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

73 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Length

10.67mm

Height

9.02mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

Mexico

Product details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 3.28

Each (In a Tube of 50) (ex VAT)

€ 3.903

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB Infineon IRFB5620PBF

€ 3.28

Each (In a Tube of 50) (ex VAT)

€ 3.903

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB Infineon IRFB5620PBF
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50€ 3.28€ 164.00
100 - 200€ 2.70€ 135.00
250 - 450€ 2.57€ 128.50
500 - 950€ 2.44€ 122.00
1000+€ 2.29€ 114.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

73 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Length

10.67mm

Height

9.02mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

Mexico

Product details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.