N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 FP Infineon IRFI3205PBF

RS Stock No.: 124-8986Brand: InfineonManufacturers Part No.: IRFI3205PBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

170 nC @ 10 V

Height

9.8mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

€ 3.13

Each (In a Tube of 50) (ex VAT)

€ 3.725

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 FP Infineon IRFI3205PBF

€ 3.13

Each (In a Tube of 50) (ex VAT)

€ 3.725

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 FP Infineon IRFI3205PBF
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50€ 3.13€ 156.50
100 - 200€ 2.55€ 127.50
250+€ 2.42€ 121.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

170 nC @ 10 V

Height

9.8mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.