N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon SPP17N80C3XKSA1

RS Stock No.: 911-0730Brand: InfineonManufacturers Part No.: SPP17N80C3XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

88 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Height

9.45mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 4.79

Each (In a Tube of 50) (ex VAT)

€ 5.70

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon SPP17N80C3XKSA1

€ 4.79

Each (In a Tube of 50) (ex VAT)

€ 5.70

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon SPP17N80C3XKSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50€ 4.79€ 239.50
100 - 200€ 4.64€ 232.00
250+€ 4.51€ 225.50

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

88 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Height

9.45mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.