N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG

RS Stock No.: 124-9944Brand: onsemiManufacturers Part No.: 2N7002ET
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Height

0.94mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG

P.O.A.

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Height

0.94mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor