MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Transistor Configuration Pin Count Channel Mode Category Maximum Power Dissipation Maximum Operating Temperature Dimensions Length Transistor Material Forward Transconductance Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Minimum Operating Temperature Height Width Series Typical Turn-On Delay Time Typical Turn-Off Delay Time Forward Diode Voltage Number of Elements per Chip
Microchip MIC94053YC6-TR P-channel MOSFET, 2 A, 6 V MIC9405, 6-Pin SC-70-6 Microchip P new products only 2 A 6 V 180 mΩ 1.2V 0.5V 4.5 V SC-70-6 Surface Mount Single 6 Enhancement - 0.27 W +150 °C 2.2 x 1.35 x 1mm 2.2mm Si - - - -40 °C 1mm 1.35mm MIC9405 15 ns 60 ns - 1
Microchip DN3525N8-G N-channel MOSFET, 360 mA, 250 V Depletion, 4-Pin TO-243AA Microchip N - 360 mA 250 V 6 Ω 3.5V - ±20 V TO-243AA Surface Mount Single 4 Depletion - 1.6 W +150 °C 4.6 x 2.6 x 1.6mm 4.6mm Si - 270 pF @ 25 V - -55 °C 1.6mm 2.6mm - 20 ns 25 ns - 1
Microchip VN2222LL-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N - 230 mA 60 V 7.5 Ω 2.5V - ±30 V TO-92 Through Hole Single 3 Enhancement - 1 W +150 °C 5.08 x 4.06 x 5.33mm 5.08mm Si 100s 60 pF @ 25 V - -55 °C 5.33mm 4.06mm - 10 ns 10 ns 0.85V 1
Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip P - 250 mA 60 V 15 Ω 3.5V - ±20 V TO-92 Through Hole Single 3 Enhancement - 1 W +150 °C 5.08 x 4.06 x 5.33mm 5.08mm Si 200s 45 pF @ -25 V - -55 °C 5.33mm 4.06mm - 4 ns 5 ns 2V 1
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P - 175 mA 40 V 10 Ω 2V - ±20 V TO-92 Through Hole Single 3 Enhancement - 0.74 W +150 °C 5.08 x 4.06 x 5.33mm 5.08mm Si 200s 35 pF @ -25 V - -55 °C 5.33mm 4.06mm - 4 ns 5 ns 2V 1
Microchip VN2410L-G N-channel MOSFET, 190 mA, 240 V, 3-Pin TO-92 Microchip N - 190 mA 240 V 10 Ω 2V - ±20 V TO-92 Through Hole Single 3 Enhancement - 1 W +150 °C 0.205 x 0.165 x 0.21in 5.2mm Si - 125 pF @ 25 V - -55 °C 0.21in 0.165in - 8 ns 23 ns - 1
Microchip DN2540N3-G N-channel MOSFET, 120 mA, 400 V Depletion, 3-Pin TO-92 Microchip N - 120 mA 400 V 25 Ω 3.5V - ±20 V TO-92 Through Hole Single 3 Depletion - 1 W +150 °C 0.205 x 0.165 x 0.21in 5.2mm Si - 200 pF @ 25 V - -55 °C 0.21in 0.165in - 10 ns 15 ns - 1
Microchip LND150N3-G N-channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 Microchip N - 30 mA 500 V 1 kΩ 3V - ±20 V TO-92 Through Hole Single 3 Depletion Power MOSFET 0.74 W +150 °C 0.205 x 0.165 x 0.21in 5.2mm Si - 7.5 pF @ 25 V - -55 °C 0.21in 0.165in - 90 ns 100 ns - 1
Microchip DN1509N8-G N-channel MOSFET, 360 mA, 90 V Depletion, 4-Pin TO-243AA Microchip N - 360 mA 90 V 6 Ω 3.5V - ±20 V TO-243AA Surface Mount Single 4 Depletion - 1.6 W +150 °C 4.6 x 2.6 x 1.6mm 4.6mm Si - 70 pF @ 25 V - -55 °C 1.6mm 2.6mm - 12 ns 15 ns - 1
Microchip DN3535N8-G N-channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA Microchip N - 230 mA 350 V 10 Ω 3.5V - ±20 V TO-243AA Surface Mount Single 4 Depletion - 1.6 W +150 °C 4.6 x 2.6 x 1.6mm 4.6mm Si - 360 pF@ 25 V - -55 °C 1.6mm 2.6mm - 15 ns 20 ns - 1
Microchip DN2535N3-G N-channel MOSFET, 120 mA, 350 V Depletion, 3-Pin TO-92 Microchip N - 120 mA 350 V 25 Ω 3.5V - ±20 V TO-92 Through Hole Single 3 Depletion - 1 W +150 °C 0.205 x 0.165 x 0.21in 5.2mm Si - 200 pF @ 25 V - -55 °C 0.21in 0.165in - 10 ns 15 ns - 1
Microchip DN3545N3-G N-channel MOSFET, 130 mA, 450 V Depletion, 3-Pin TO-92 Microchip N - 130 mA 450 V 20 Ω 3.5V - ±20 V TO-92 Through Hole Single 3 Depletion - 0.74 W +150 °C 0.205 x 0.165 x 0.21in 5.2mm Si - 360 pF@ 25 V - -55 °C 0.21in 0.165in - 20 ns 30 ns - 1
Microchip DN2540N5-G N-channel MOSFET, 500 mA, 400 V Depletion, 3-Pin TO-220 Microchip N - 500 mA 400 V 25 Ω 3.5V - ±20 V TO-220 Through Hole Single 3 Depletion - 15 W +150 °C 0.42 x 0.19 x 0.65in 10.6mm Si - 200 pF @ 25 V - -55 °C 0.65in 0.19in - 10 ns 15 ns - 1
Microchip 2N7008-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N - 230 mA 60 V 7.5 Ω 2.5V 1V ±30 V TO-92 Through Hole Single 3 Enhancement Power MOSFET 1 W +150 °C 0.2 x 0.16 x 0.21in 5.08mm Si - 50 pF @ 25 V (Max) - -55 °C 0.21in 0.16in - 20 ns 20 ns 1.5V 1
Microchip DN2530N3-G N-channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92 Microchip N - 175 mA 300 V 12 Ω 3.5V - ±20 V TO-92 Through Hole Single 3 Depletion - 0.74 W +150 °C 0.205 x 0.165 x 0.21in 5.2mm Si - 300 pF@ 25 V - -55 °C 0.21in 0.165in - 10 ns 15 ns - 1
Microchip DN2625DK6-G N-channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip N - 1.1 A 250 V 3.5 Ω - - ±20 V DFN Surface Mount Single 8 Depletion Power MOSFET - +150 °C 5.1 x 5.1 x 0.85mm 5.1mm Si - 800 pF @ 25 V 7.04 nC @ 1.5 V -55 °C 0.85mm 5.1mm - 10 ns 10 ns 1.8V 1
Microchip DN3765K4-G N-channel MOSFET, 300 mA, 650 V Depletion, 3-Pin TO-252 Microchip N - 300 mA 650 V 8 Ω 3.5V - ±20 V TO-252 Surface Mount Single 3 Depletion - 2.5 W +150 °C 0.245 x 0.265 x 0.094in 6.2mm Si - 825 pF@ 25 V - -55 °C 0.094in 0.265in - 50 ns 75 ns - 1
Microchip LND01K1-G N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip N - 330 mA 9 V 1.4 Ω - - 0.6 V SOT-23 Surface Mount Single 5 Depletion - 0.36 W +125 °C 3.05 x 1.75 x 1.3mm 3.05mm Si - 46 pF - -25 °C 1.3mm 1.75mm - 3.8 ns 1 ns - 1
Microchip LND150N8-G N-channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip N - 30 mA 500 V 1 kΩ 3V - ±20 V TO-243AA Surface Mount Single 4 Depletion Power MOSFET 1.6 W +150 °C 4.6 x 2.6 x 1.6mm 4.6mm Si - 7.5 pF @ 25 V - -55 °C 1.6mm 2.6mm - 90 ns 100 ns - 1
Microchip MCP87022T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN Microchip N - 100 A 25 V 2.6 mΩ 1.6V - -8 V, 10 V DFN Surface Mount Single 8 Enhancement Power MOSFET 2.2 W +150 °C 5 x 6 x 1mm 5mm Si - 2310 pF @ 12.5 V 25.5 nC @ 4.5 V -55 °C 1mm 6mm MCP87 7.6 ns 21 ns - 1
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