Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
100 V
Package Type
TP-FA
Mounting Type
Surface Mount
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
6.5 x 5.5 x 2.3mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
General Purpose PNP Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
700
P.O.A.
700
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
100 V
Package Type
TP-FA
Mounting Type
Surface Mount
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
6.5 x 5.5 x 2.3mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
General Purpose PNP Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.