Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-800 mA
Maximum Collector Emitter Voltage
-60 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Product details
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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€ 0.08
Each (Supplied as a Tape) (ex VAT)
€ 0.095
Each (Supplied as a Tape) (inc VAT)
2000
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4000 - 8000 | € 0.08 | € 160.00 |
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20000 - 28000 | € 0.08 | € 160.00 |
30000+ | € 0.08 | € 160.00 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-800 mA
Maximum Collector Emitter Voltage
-60 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Product details
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.