Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Minimum Operating Temperature
-55 °C
Pin Count
8
Transistor Configuration
Single
Forward Diode Voltage
1V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
1.2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Voltage
60 V
Maximum Gate Source Voltage
±20 V
Height
1.55mm
Width
3.9mm
Maximum Power Dissipation
12.5 W
Length
4.85mm
Maximum Continuous Drain Current
23 A
Maximum Drain Source Resistance
15 mΩ
Package Type
SOP
Typical Gate Charge @ Vgs
19 nC @ 4.5 V, 37 nC @ 10 V
Brand
Taiwan SemiconductorStock information temporarily unavailable.
Please check again later.
P.O.A.
2500
P.O.A.
2500
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Minimum Operating Temperature
-55 °C
Pin Count
8
Transistor Configuration
Single
Forward Diode Voltage
1V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
1.2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Voltage
60 V
Maximum Gate Source Voltage
±20 V
Height
1.55mm
Width
3.9mm
Maximum Power Dissipation
12.5 W
Length
4.85mm
Maximum Continuous Drain Current
23 A
Maximum Drain Source Resistance
15 mΩ
Package Type
SOP
Typical Gate Charge @ Vgs
19 nC @ 4.5 V, 37 nC @ 10 V
Brand
Taiwan Semiconductor