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BJT & Bipolar Transistors

A Bipolar Transistor or BJT (Bipolar Junction Transistor) is a solid state, three-pin device made from three layers of silicon. A BJT is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive negative).
How a Bipolar transistor is made
A bipolar transistor is made by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.
What does a bipolar transistor do?
As we said before a bipolar transistor has two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.
Types of transistor
Transistors are available in panel, surface and through hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.
Where are bipolar transistors used?
Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).
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Part Details Brand Stock Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Minimum DC Current Gain Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Maximum Collector Emitter Saturation Voltage Maximum Base Emitter Saturation Voltage Height Length Width Minimum Operating Temperature Maximum Operating Temperature Transistor Material Diameter
ON Semi NSVF4015SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
  • € 0.29
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ON Semiconductor 3000 NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4017SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
  • € 0.29
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ON Semiconductor 3000 NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4015SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL ON Semiconductor 0 NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4017SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL ON Semiconductor 0 NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
450V 4A NPN Power Transistor TO220AB DiodesZetex 0 NPN 4 A 700 V TO-220AB Through Hole 75 W 8 Single 10 V 9 V 4 (Min.) MHz 3 1 10.2 x 4.5 x 16.1mm 0.9 V 1.3 V 16.1mm 10.2mm 4.5mm -65 °C +150 °C - -
450V 4A NPN Power Transistor TO220F DiodesZetex 0 NPN 4 A 700 V TO-220F Through Hole 28 W 8 Single 10 V 9 V 4 (Min.) MHz 3 1 10.3 x 4.9 x 16mm 0.9 V 1.3 V 16mm 10.3mm 4.9mm -65 °C +150 °C - -
BJT Bipolar Transistors - BJT TRANS GP T Nexperia 0 - - - - - - - - - - - - - - - - - - - - - - -
Bip Tr.,NPN,230V/15A,TO-3P(L) Toshiba 0 - - - - - - - - - - - - - - - - - - - - - - -
Bip Tr.,NPN,230V/15A,TO-3P(N) Toshiba 0 - - - - - - - - - - - - - - - - - - - - - - -
Bip Tr.,PNP,-230V/-15A,TO-3P(N) Toshiba 0 - - - - - - - - - - - - - - - - - - - - - - -
Bipolar Transistors - BJT TRANS MED PWR Nexperia 0 - - - - - - - - - - - - - - - - - - - - - - -
Bipolar Transistors - Pre-Biased TRANS Nexperia 0 - - - - - - - - - - - - - - - - - - - - - - -
Diodes Inc BC846BW-7-F NPN Transistor, 100 mA, 65 V, 3-Pin SOT-323
  • € 0.02
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DiodesZetex 0 NPN 100 mA 65 V SOT-323 (SC-70) Surface Mount 200 mW 200 Single 80 V 6 V 300 MHz 3 1 2.2 x 1.35 x 1mm 600 mV 900 mV 1mm 2.2mm 1.35mm -65 °C +150 °C - -
Diodes Inc BC847AW-7-F NPN Transistor, 100 mA, 45 V, 3-Pin SOT-323
  • € 0.02
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DiodesZetex 0 NPN 100 mA 45 V SOT-323 (SC-70) Surface Mount 200 mW 110 Single 50 V 6 V 100 MHz 3 1 2.2 x 1.35 x 1mm 600 mV 900 mV 1mm 2.2mm 1.35mm -65 °C +150 °C - -
Diodes Inc BCX54TA NPN Transistor, 1 A, 45 V, 3-Pin SOT-89
  • € 0.12
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DiodesZetex 0 NPN 1 A 45 V SOT-89 Surface Mount 1 W 40 Single 45 V 5 V 150 MHz 3 1 4.6 x 2.6 x 1.6mm 0.5 V - 1.6mm 4.6mm 2.6mm -65 °C +150 °C - -
Dual NPN transistor,PUMX1 SOT363 100mA
  • € 0.05
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Nexperia 0 - - - - - - - - - - - - - - - - - - - - - - -
General Purpose Transistr NPN,BC846ALT1G
  • € 0.02
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ON Semiconductor 0 - - - - - - - - - - - - - - - - - - - - - - -
Infineon BCW61CE6327HTSA1 PNP Bipolar Transistor, 100 mA, 32 V, 3-Pin SOT-23
  • € 0.02
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Infineon 0 PNP 100 mA 32 V SOT-23 Surface Mount 330 mW 380 Single 32 V 5 V 250 MHz 3 1 2.9 x 1.3 x 0.9mm 0.55 V 1.05 V 0.9mm 2.9mm 1.3mm - +150 °C - -
Infineon,Trans BC849CE6327
  • € 0.02
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Infineon 0 NPN 100 mA 30 V SOT-23 Surface Mount 330 mW 420 Single 30 V 6 V 250 MHz 3 1 2.9 x 1.3 x 0.9mm 600 mV 900 mV 0.9mm 2.9mm 1.3mm - +150 °C - -
Infineon,Trans BCX70KE6327
  • € 0.05
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Infineon 0 NPN 100 mA 45 V SOT-23 Surface Mount 330 mW 380 Single 45 V 6 V 250 MHz 3 1 2.9 x 1.3 x 0.9mm 0.55 V 1.05 V 0.9mm 2.9mm 1.3mm - +150 °C - -
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