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IGBTs

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors, Bipolar transistors and MOSFET.

What is a typical application of IGBTs?
• Electric motors
• Uninterruptible power supplies
• Solar panel installations
• Welders
• Power converters & inverters
• Inductive chargers
• Inductive cookers

How do IGBT transistors work?
IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure. IGBT transistors are widely used for switching electrical power in applications such as welding, electric cars, air conditioners, trains and uninterruptible power supplies.

What are the different types of IGBT Transistors?
There are various types of IGBT transistors and they are categorised by parameters such as maximum voltage, collector current, packaging type and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level, and the applications being considered.

What is a difference between MOSFETs and IGBTs?
An IGBTs do have a much lower forward voltage drop compared to a conventional MOSFET in a higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.
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Part Details Brand Stock Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
ON Semiconductor FGH40T120SQDNL4 P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247 ON Semiconductor 0 160 A 1200 V ±30V 454 W 1 TO-247 Through Hole P 4 - Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 5000pF - +175 °C -55 °C -
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03 ON Semiconductor 0 60 A 650 V ±30V 333 W 1 TO-247 G03 Through Hole P 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 3813pF 50µJ +175 °C -55 °C -
N/P-Ch PPAK SC-70 12/20 V 28/54mohms @ 4
  • € 0.27
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Vishay 11420 - - - - - - - - - - - - - - - - - - - -
P-Ch MOSFET PPAK1212 Cu wire 30V 26mohm
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Vishay 8740 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK 1212-8 Cu wire 150V 315mo
  • € 0.69
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Vishay 6000 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK SO-8 100V 41mohm @ 10V
  • € 1.89
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Vishay 5770 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK1212 Cu 20V 9 mohm@4.5V
  • € 0.49
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Vishay 5100 - - - - - - - - - - - - - - - - - - - -
P channel ;VBRDSS -200 V; RDSon 1500 m Vishay 3000 - - - - - - - - - - - - - - - - - - - -
P channel ;VBRDSS -60 V; RDSon 280 mOh Vishay 3000 - - - - - - - - - - - - - - - - - - - -
P channel ;VBRDSS -60 V; RDSon 500 mOh Vishay 3000 - - - - - - - - - - - - - - - - - - - -
Single N-Ch PPAK SC70 30V with Schottky
  • € 0.20
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Vishay 3000 - - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
  • € 2.01
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Vishay 2995 - - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK® 1212-8 BWL 30V 25moh
  • € 1.08
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Vishay 2995 - - - - - - - - - - - - - - - - - - - -
N-Ch PowerPAK SO-8 60V 7.5mohm @ 10V- Le
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Vishay 2995 - - - - - - - - - - - - - - - - - - - -
N channel ;VBRDSS 100 V; RDSon 270 mOh Vishay 2990 - - - - - - - - - - - - - - - - - - - -
N channel ;VBRDSS 500 V; RDSon 1700 mO Vishay 2990 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK SO-8 BWL 30V 10mohm @ 10V
  • € 0.95
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Vishay 2990 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK SO-8 BWL 30V 5.5mohm @ 10
  • € 1.08
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Vishay 2990 - - - - - - - - - - - - - - - - - - - -
N channel ;VBRDSS 200 V; RDSon 1500 mO Vishay 2980 - - - - - - - - - - - - - - - - - - - -
N channel ;VBRDSS 500 V; RDSon 3000 mO Vishay 2980 - - - - - - - - - - - - - - - - - - - -
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