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Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3

RS Stock No.: 787-9008PBrand: VishayManufacturers Part No.: SI4948BEY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 75.50

€ 1.51 Each (Supplied on a Reel) (ex VAT)

€ 89.84

€ 1.797 Each (Supplied on a Reel) (inc. VAT)

Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3
Select packaging type

€ 75.50

€ 1.51 Each (Supplied on a Reel) (ex VAT)

€ 89.84

€ 1.797 Each (Supplied on a Reel) (inc. VAT)

Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
50 - 245€ 1.51€ 7.55
250 - 495€ 1.25€ 6.25
500 - 1245€ 1.04€ 5.20
1250+€ 0.97€ 4.85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in