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Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA

RS Stock No.: 669-7518Brand: DiodesZetexManufacturers Part No.: ZXMP3A13FTA
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

3.8 nC @ 5 V, 6.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 3.90

€ 0.39 Each (In a Pack of 10) (ex VAT)

€ 4.64

€ 0.464 Each (In a Pack of 10) (inc. VAT)

Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA
Select packaging type

€ 3.90

€ 0.39 Each (In a Pack of 10) (ex VAT)

€ 4.64

€ 0.464 Each (In a Pack of 10) (inc. VAT)

Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 20€ 0.39€ 3.90
30 - 140€ 0.23€ 2.30
150 - 740€ 0.21€ 2.10
750 - 1490€ 0.18€ 1.80
1500+€ 0.16€ 1.60

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

3.8 nC @ 5 V, 6.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more