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Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3

RS Stock No.: 787-9005PBrand: VishayManufacturers Part No.: SI1012CR-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

240 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

1.3 nC @ 8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

1.68mm

Width

0.86mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Product details

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 36.00

€ 0.18 Each (Supplied on a Reel) (ex VAT)

€ 42.84

€ 0.214 Each (Supplied on a Reel) (inc. VAT)

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
Select packaging type

€ 36.00

€ 0.18 Each (Supplied on a Reel) (ex VAT)

€ 42.84

€ 0.214 Each (Supplied on a Reel) (inc. VAT)

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Reel
200 - 480€ 0.18€ 3.60
500 - 980€ 0.16€ 3.20
1000 - 1980€ 0.10€ 2.00
2000+€ 0.10€ 2.00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

240 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

1.3 nC @ 8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

1.68mm

Width

0.86mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Product details

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more