Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 454.70
€ 45.47 Each (In a Tube of 10) (ex VAT)
€ 541.09
€ 54.109 Each (In a Tube of 10) (inc. VAT)
10
€ 454.70
€ 45.47 Each (In a Tube of 10) (ex VAT)
€ 541.09
€ 54.109 Each (In a Tube of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | € 45.47 | € 454.70 |
50 - 90 | € 44.09 | € 440.90 |
100 - 190 | € 39.47 | € 394.70 |
200 - 490 | € 37.38 | € 373.80 |
500+ | € 35.24 | € 352.40 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Product details