N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E

RS Stock No.: 829-0627Brand: STMicroelectronicsManufacturers Part No.: PD55015-E
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+165 °C

Length

9.6mm

Width

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Height

3.6mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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€ 29.82

Each (ex VAT)

€ 35.49

Each (inc. VAT)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 29.82
2€ 59.64
3€ 89.46
4€ 119.28
5€ 149.10
6€ 178.92
7€ 208.74
8€ 238.56
9€ 268.38
10€ 298.20
11€ 328.02
12€ 357.84
13€ 387.66
14€ 417.48
15€ 447.30

€ 29.82

Each (ex VAT)

€ 35.49

Each (inc. VAT)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 29.82
2€ 59.64
3€ 89.46
4€ 119.28
5€ 149.10
6€ 178.92
7€ 208.74
8€ 238.56
9€ 268.38
10€ 298.20
11€ 328.02
12€ 357.84
13€ 387.66
14€ 417.48
15€ 447.30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+165 °C

Length

9.6mm

Width

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Height

3.6mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more