Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.1 x 4.1 x 4.7mm
Maximum Operating Temperature
+150 °C
Product details
Small Signal NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
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P.O.A.
250
P.O.A.
250
Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.1 x 4.1 x 4.7mm
Maximum Operating Temperature
+150 °C
Product details