Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 65.00
€ 0.13 Each (Supplied on a Reel) (ex VAT)
€ 77.35
€ 0.155 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
€ 65.00
€ 0.13 Each (Supplied on a Reel) (ex VAT)
€ 77.35
€ 0.155 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 500 - 900 | € 0.13 | € 13.00 |
| 1000 - 2400 | € 0.10 | € 10.00 |
| 2500 - 4900 | € 0.10 | € 10.00 |
| 5000+ | € 0.08 | € 8.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products