Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 10.50
€ 0.21 Each (In a Pack of 50) (ex VAT)
€ 12.50
€ 0.25 Each (In a Pack of 50) (inc. VAT)
Standard
50
€ 10.50
€ 0.21 Each (In a Pack of 50) (ex VAT)
€ 12.50
€ 0.25 Each (In a Pack of 50) (inc. VAT)
Standard
50
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products