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Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7

RS Stock No.: 921-1105Brand: DiodesZetexManufacturers Part No.: DMN53D0LDW-7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 10.00

€ 0.10 Each (In a Pack of 100) (ex VAT)

€ 11.90

€ 0.119 Each (In a Pack of 100) (inc. VAT)

Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7
Select packaging type

€ 10.00

€ 0.10 Each (In a Pack of 100) (ex VAT)

€ 11.90

€ 0.119 Each (In a Pack of 100) (inc. VAT)

Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
100 - 400€ 0.10€ 10.00
500 - 900€ 0.08€ 8.00
1000 - 1900€ 0.08€ 8.00
2000 - 2900€ 0.08€ 8.00
3000+€ 0.08€ 8.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more