Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
21.1 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 51.00
€ 0.34 Each (Supplied on a Reel) (ex VAT)
€ 60.69
€ 0.405 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
150
€ 51.00
€ 0.34 Each (Supplied on a Reel) (ex VAT)
€ 60.69
€ 0.405 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
150
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 150 - 725 | € 0.34 | € 8.50 |
| 750 - 1475 | € 0.31 | € 7.75 |
| 1500+ | € 0.29 | € 7.25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
21.1 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products