Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
920 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Length
1.08mm
Typical Gate Charge @ Vgs
1.5 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
0.675mm
Transistor Material
Si
Height
0.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
25
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
920 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Length
1.08mm
Typical Gate Charge @ Vgs
1.5 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
0.675mm
Transistor Material
Si
Height
0.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


