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Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA

RS Stock No.: 823-4059Brand: DiodesZetexManufacturers Part No.: ZXMC4559DN8TA
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Technical Document

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

2.6 A, 4.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ, 125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

20.4 nC @ 10 V, 24.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 18.20

€ 0.91 Each (In a Pack of 20) (ex VAT)

€ 21.66

€ 1.083 Each (In a Pack of 20) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Select packaging type

€ 18.20

€ 0.91 Each (In a Pack of 20) (ex VAT)

€ 21.66

€ 1.083 Each (In a Pack of 20) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 240€ 0.91€ 18.20
260+€ 0.76€ 15.20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

2.6 A, 4.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ, 125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

20.4 nC @ 10 V, 24.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more