Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 16.25
€ 0.65 Each (In a Pack of 25) (ex VAT)
€ 19.34
€ 0.774 Each (In a Pack of 25) (inc. VAT)
Standard
25
€ 16.25
€ 0.65 Each (In a Pack of 25) (ex VAT)
€ 19.34
€ 0.774 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 125 | € 0.65 | € 16.25 |
| 150 - 725 | € 0.55 | € 13.75 |
| 750 - 1475 | € 0.47 | € 11.75 |
| 1500+ | € 0.39 | € 9.75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products