Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.: 862-9353PBrand: Fairchild SemiconductorManufacturers Part No.: ISL9V3040S3ST
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Technical Document

Specifications

Maximum Continuous Collector Current

21 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.83mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 3.63

Each (Supplied on a Reel) (ex VAT)

€ 4.32

Each (Supplied on a Reel) (inc VAT)

Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
Select packaging type

€ 3.63

Each (Supplied on a Reel) (ex VAT)

€ 4.32

Each (Supplied on a Reel) (inc VAT)

Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
5 - 5€ 3.63€ 18.15
10 - 95€ 3.15€ 15.75
100 - 245€ 2.47€ 12.35
250 - 495€ 2.42€ 12.10
500+€ 2.27€ 11.35

Ideate. Create. Collaborate

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Technical Document

Specifications

Maximum Continuous Collector Current

21 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.83mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more