N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

RS Stock No.: 170-2290Brand: InfineonManufacturers Part No.: BSC12DN20NS3GATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Height

1.1mm

Series

BSC12DN20NS3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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€ 0.83

Each (On a Reel of 5000) (ex VAT)

€ 0.988

Each (On a Reel of 5000) (inc VAT)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

€ 0.83

Each (On a Reel of 5000) (ex VAT)

€ 0.988

Each (On a Reel of 5000) (inc VAT)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Height

1.1mm

Series

BSC12DN20NS3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V