N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Series
BSC12DN20NS3 G
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
€ 1.44
Each (In a Pack of 10) (ex VAT)
€ 1.714
Each (In a Pack of 10) (inc VAT)
10
€ 1.44
Each (In a Pack of 10) (ex VAT)
€ 1.714
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 1.44 | € 14.40 |
| 50 - 90 | € 1.39 | € 13.90 |
| 100 - 240 | € 1.26 | € 12.60 |
| 250 - 490 | € 1.16 | € 11.60 |
| 500+ | € 1.11 | € 11.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Series
BSC12DN20NS3 G
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products