Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

RS Stock No.: 218-3043Brand: InfineonManufacturers Part No.: IPD35N10S3L26ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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€ 19.65

€ 1.31 Each (In a Pack of 15) (ex VAT)

€ 23.38

€ 1.559 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
Select packaging type

€ 19.65

€ 1.31 Each (In a Pack of 15) (ex VAT)

€ 23.38

€ 1.559 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
15 - 60€ 1.31€ 19.65
75 - 135€ 1.25€ 18.75
150 - 360€ 1.23€ 18.45
375 - 735€ 1.20€ 18.00
750+€ 1.12€ 16.80

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more