N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP

RS Stock No.: 162-3292Brand: InfineonManufacturers Part No.: IRF1010EZSTRLP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

58 nC @ 10 V

Forward Diode Voltage

1.3V

Height

4.83mm

Series

IRF1010EZS

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP
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P.O.A.

N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

58 nC @ 10 V

Forward Diode Voltage

1.3V

Height

4.83mm

Series

IRF1010EZS

Minimum Operating Temperature

-55 °C