N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF

RS Stock No.: 178-5089Brand: InfineonManufacturers Part No.: IRLR3410TRPBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 5 V

Height

2.39mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

China

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€ 0.71

Each (On a Reel of 2000) (ex VAT)

€ 0.845

Each (On a Reel of 2000) (inc VAT)

N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF

€ 0.71

Each (On a Reel of 2000) (ex VAT)

€ 0.845

Each (On a Reel of 2000) (inc VAT)

N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 5 V

Height

2.39mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

China