N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

RS Stock No.: 177-5342Brand: IXYSManufacturers Part No.: IXFN210N30P3
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

268 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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€ 58.43

Each (In a Tube of 10) (ex VAT)

€ 69.532

Each (In a Tube of 10) (inc. VAT)

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

10

Available in multiples of 10
10€ 584.30
20€ 1,168.60
30€ 1,752.90
40€ 2,337.20
50€ 2,921.50
60€ 3,505.80
70€ 4,090.10
80€ 4,674.40
90€ 5,258.70
100€ 5,843.00
110€ 6,427.30
120€ 7,011.60
130€ 7,595.90
140€ 8,180.20
150€ 8,764.50

€ 58.43

Each (In a Tube of 10) (ex VAT)

€ 69.532

Each (In a Tube of 10) (inc. VAT)

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3
Stock information temporarily unavailable.

10

Available in multiples of 10
10€ 584.30
20€ 1,168.60
30€ 1,752.90
40€ 2,337.20
50€ 2,921.50
60€ 3,505.80
70€ 4,090.10
80€ 4,674.40
90€ 5,258.70
100€ 5,843.00
110€ 6,427.30
120€ 7,011.60
130€ 7,595.90
140€ 8,180.20
150€ 8,764.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

268 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more