IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 8.25
€ 8.25 Each (ex VAT)
€ 9.82
€ 9.82 Each (inc. VAT)
Standard
1
€ 8.25
€ 8.25 Each (ex VAT)
€ 9.82
€ 9.82 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 4 | € 8.25 |
| 5 - 19 | € 7.80 |
| 20 - 49 | € 7.44 |
| 50 - 99 | € 6.50 |
| 100+ | € 6.32 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products