Technical Document
Specifications
Brand
MicrochipProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
1.1A
Maximum Drain Source Voltage Vds
250V
Package Type
DFN
Series
DN2625
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
3.5Ω
Channel Mode
Depletion
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
7.04nC
Forward Voltage Vf
1.8V
Maximum Operating Temperature
-55°C
Transistor Configuration
Single
Height
0.85mm
Length
5.1mm
Standards/Approvals
No
Number of Elements per Chip
1
Automotive Standard
No
Product details
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads
MOSFET Transistors, Microchip
Stock information temporarily unavailable.
€ 20.50
€ 4.10 Each (In a Pack of 5) (ex VAT)
€ 24.40
€ 4.879 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 20.50
€ 4.10 Each (In a Pack of 5) (ex VAT)
€ 24.40
€ 4.879 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Technical Document
Specifications
Brand
MicrochipProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
1.1A
Maximum Drain Source Voltage Vds
250V
Package Type
DFN
Series
DN2625
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
3.5Ω
Channel Mode
Depletion
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
7.04nC
Forward Voltage Vf
1.8V
Maximum Operating Temperature
-55°C
Transistor Configuration
Single
Height
0.85mm
Length
5.1mm
Standards/Approvals
No
Number of Elements per Chip
1
Automotive Standard
No
Product details
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads


