Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Please check again later.
€ 0.10
Each (On a Reel of 3000) (ex VAT)
€ 0.119
Each (On a Reel of 3000) (inc. VAT)
3000
€ 0.10
Each (On a Reel of 3000) (ex VAT)
€ 0.119
Each (On a Reel of 3000) (inc. VAT)
3000
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details