Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-4.9 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 45.50
€ 0.91 Each (Supplied on a Reel) (ex VAT)
€ 54.14
€ 1.083 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 45.50
€ 0.91 Each (Supplied on a Reel) (ex VAT)
€ 54.14
€ 1.083 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 0.91 | € 9.10 |
| 100 - 190 | € 0.84 | € 8.40 |
| 200 - 390 | € 0.84 | € 8.40 |
| 400+ | € 0.81 | € 8.10 |
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-4.9 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


