ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220

RS Stock No.: 864-8950PBrand: ON SemiconductorManufacturers Part No.: FJP2160DTU
brand-logo
View all in Home

Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Select packaging type

P.O.A.

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.