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onsemi 2SK3557-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP

RS Stock No.: 163-2021Brand: onsemiManufacturers Part No.: 2SK3557-7-TB-E
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

16 to 32mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Country of Origin

China

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Stock information temporarily unavailable.

€ 690.00

€ 0.23 Each (On a Reel of 3000) (ex VAT)

€ 821.10

€ 0.274 Each (On a Reel of 3000) (inc. VAT)

onsemi 2SK3557-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP

€ 690.00

€ 0.23 Each (On a Reel of 3000) (ex VAT)

€ 821.10

€ 0.274 Each (On a Reel of 3000) (inc. VAT)

onsemi 2SK3557-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

16 to 32mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Country of Origin

China

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more