Dual N-Channel MOSFET, 40 A, 12 V Depletion, 10-Pin WLCSP onsemi EFC2K103NUZTDGOS

RS Stock No.: 195-2484Brand: onsemiManufacturers Part No.: EFC2K103NUZTDG
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±8 V

Width

1.8mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.57mm

Typical Gate Charge @ Vgs

62 nC @ 3.8 V nC

Height

0.14mm

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P.O.A.

Dual N-Channel MOSFET, 40 A, 12 V Depletion, 10-Pin WLCSP onsemi EFC2K103NUZTDGOS

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 40 A, 12 V Depletion, 10-Pin WLCSP onsemi EFC2K103NUZTDGOS
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±8 V

Width

1.8mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.57mm

Typical Gate Charge @ Vgs

62 nC @ 3.8 V nC

Height

0.14mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more