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onsemi PowerTrench Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ

RS Stock No.: 166-3723Brand: onsemiManufacturers Part No.: FDY1002PZ
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

830 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-89-6

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

625 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

1.2mm

Length

1.7mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stock information temporarily unavailable.

€ 780.00

€ 0.26 Each (On a Reel of 3000) (ex VAT)

€ 928.20

€ 0.309 Each (On a Reel of 3000) (inc. VAT)

onsemi PowerTrench Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ

€ 780.00

€ 0.26 Each (On a Reel of 3000) (ex VAT)

€ 928.20

€ 0.309 Each (On a Reel of 3000) (inc. VAT)

onsemi PowerTrench Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

830 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-89-6

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

625 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

1.2mm

Length

1.7mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more