ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

RS Stock No.: 773-7816Brand: onsemiManufacturers Part No.: MMBFJ177LT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Product details

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0.35

Each (In a Pack of 10) (ex VAT)

€ 0.416

Each (In a Pack of 10) (inc VAT)

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Select packaging type

€ 0.35

Each (In a Pack of 10) (ex VAT)

€ 0.416

Each (In a Pack of 10) (inc VAT)

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 90€ 0.35€ 3.50
100 - 240€ 0.18€ 1.80
250 - 490€ 0.15€ 1.50
500 - 990€ 0.15€ 1.50
1000+€ 0.13€ 1.30

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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Product details

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.