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onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055-100T1G

RS Stock No.: 793-1055Brand: onsemiManufacturers Part No.: NTF3055-100T1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Typical Gate Charge @ Vgs

22 nC @ 10 V dc

Maximum Operating Temperature

+175 °C

Length

6.7mm

Minimum Operating Temperature

-55 °C

Height

1.65mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

€ 9.90

€ 0.99 Each (In a Pack of 10) (ex VAT)

€ 11.78

€ 1.178 Each (In a Pack of 10) (inc. VAT)

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055-100T1G
Select packaging type

€ 9.90

€ 0.99 Each (In a Pack of 10) (ex VAT)

€ 11.78

€ 1.178 Each (In a Pack of 10) (inc. VAT)

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055-100T1G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
10 - 90€ 0.99€ 9.90
100 - 240€ 0.86€ 8.60
250 - 490€ 0.76€ 7.60
500+€ 0.68€ 6.80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Typical Gate Charge @ Vgs

22 nC @ 10 V dc

Maximum Operating Temperature

+175 °C

Length

6.7mm

Minimum Operating Temperature

-55 °C

Height

1.65mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more