onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247-4
Series
NTH
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Transistor Material
SiC
Number of Elements per Chip
1
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€ 4,932.00
€ 10.96 Each (In a Tube of 450) (ex VAT)
€ 5,869.08
€ 13.042 Each (In a Tube of 450) (inc. VAT)
450
€ 4,932.00
€ 10.96 Each (In a Tube of 450) (ex VAT)
€ 5,869.08
€ 13.042 Each (In a Tube of 450) (inc. VAT)
Stock information temporarily unavailable.
450
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247-4
Series
NTH
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products